- 专利标题： Process for forming homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications
-
申请号： US15426119申请日： 2017-02-07
-
公开(公告)号： US10128357B2公开(公告)日： 2018-11-13
- 发明人: Adam L. Friedman , Olaf M. J. van't Erve , Jeremy T. Robinson , Berend T. Jonker , Keith E. Whitener
- 申请人： The United States of America, as represented by the Secretary of the Navy
- 申请人地址： US DC Washington
- 专利权人： The United States of America, as represented by the Secretary of the Navy
- 当前专利权人： The United States of America, as represented by the Secretary of the Navy
- 当前专利权人地址： US DC Washington
- 代理机构： US Naval Research Laboratory
- 代理商 Stephen T. Hunnius
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/88 ; H01L43/02 ; H01L43/10 ; H01L21/04 ; H01L43/12 ; H01L21/02 ; H01L29/16
摘要：
A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material—graphene.
公开/授权文献
信息查询
IPC分类:
