发明授权
- 专利标题： Cyclic deposition etch chemical vapor deposition epitaxy to reduce EPI abnormality
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申请号： US13782112申请日： 2013-03-01
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公开(公告)号： US10134896B2公开(公告)日： 2018-11-20
- 发明人: Chun Hsiung Tsai , Sheng-Wen Yu , Ying-Min Chou , Yi-Fang Pai
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/02 ; H01L29/66
摘要：
A semiconductor substructure with an improved source/drain structure is described. The semiconductor substructure can include an upper surface; a gate structure formed over the substrate; a spacer formed along a sidewall of the gate structure; and a source/drain structure disposed adjacent the gate structure. The source/drain structure is disposed over or on a recess surface of a recess that extends below said upper surface. The source/drain structure includes a first epitaxial layer, having a first composition, over or on the interface surface, and a subsequent epitaxial layer, having a subsequent composition, over or on the first epitaxial layer. A dopant concentration of the subsequent composition is greater than a dopant concentration of the first composition, and a carbon concentration of the first composition ranges from 0 to 1.4 at.-%. Methods of making semiconductor substructures including improved source/drain structures are also described.
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