- 专利标题: Power amplifier circuit
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申请号: US15821054申请日: 2017-11-22
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公开(公告)号: US10135395B2公开(公告)日: 2018-11-20
- 发明人: Satoshi Tanaka , Masatoshi Hase , Yuri Honda , Kazuo Watanabe , Takashi Soga
- 申请人: Murata Manufacturing Co., Ltd.
- 申请人地址: JP Kyoto
- 专利权人: MURATA MANUFACTURING CO., LTD.
- 当前专利权人: MURATA MANUFACTURING CO., LTD.
- 当前专利权人地址: JP Kyoto
- 代理机构: Pearne & Gordon LLP
- 优先权: JP2016-229142 20161125
- 主分类号: H03K5/22
- IPC分类号: H03K5/22 ; H03F1/02 ; H03F1/22 ; H03F1/56 ; H03F3/195 ; H03F3/213
摘要:
A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
公开/授权文献
- US20180152143A1 POWER AMPLIFIER CIRCUIT 公开/授权日:2018-05-31
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