Invention Grant
- Patent Title: Method for producing substrate with transparent electrode, and substrate with transparent electrode
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Application No.: US14424961Application Date: 2013-08-23
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Publication No.: US10138541B2Publication Date: 2018-11-27
- Inventor: Hironori Hayakawa , Takashi Kuchiyama , Hiroaki Ueda
- Applicant: KANEKA CORPORATION
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: Kaneka Corporation
- Current Assignee: Kaneka Corporation
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Alleman Hall Creasman & Tuttle LLP
- Priority: JP2012-191776 20120831
- International Application: PCT/JP2013/072619 WO 20130823
- International Announcement: WO2014/034575 WO 20140306
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/08 ; G06F3/041 ; C23C14/58 ; H05K1/02 ; H05K1/03 ; H05K3/16 ; H05K3/38 ; H05K1/09 ; H05K3/22

Abstract:
A resin substrate with a transparent electrode having a low resistance, and a manufacturing method thereof including: a deposition step wherein a transparent electrode layer of indium tin oxide is formed on a transparent film substrate by a sputtering method, and a crystallization step wherein the transparent electrode layer is crystallized. In the deposition step, a sputtering deposition is performed using a sputtering target containing indium oxide and tin oxide, while a sputtering gas containing argon and oxygen is introduced into a chamber. It is preferable that an effective exhaust rate S, calculated from a rate Q of the sputtering gas introduced into the chamber and a pressure P in the chamber by a formula S (L/second)=1.688×Q (sccm)/P (Pa), is 1,200-5,000 (L/second). It is also preferable that a resistivity of the transparent electrode layer is less than 3×10−4 Ωcm.
Public/Granted literature
- US20150225837A1 METHOD FOR PRODUCING SUBSTRATE WITH TRANSPARENT ELECTRODE, AND SUBSTRATE WITH TRANSPARENT ELECTRODE Public/Granted day:2015-08-13
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