Invention Grant
- Patent Title: Systems, methods, and apparatus for improved finFETs
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Application No.: US15418651Application Date: 2017-01-27
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Publication No.: US10141306B2Publication Date: 2018-11-27
- Inventor: Yanxiang Liu , Haining Yang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/762 ; H01L21/8234 ; H01L21/3115 ; H01L27/088 ; H01L29/06 ; H01L21/308 ; H01L21/306 ; H01L29/66
Abstract:
To avoid the problems associated with low density spin on dielectrics, some examples of the disclosure include a finFET with an oxide material having different densities. For example, one such finFET may include an oxide material located in a gap between adjacent fins, the oxide material directly contacts the adjacent fins of the plurality of fins with a first density proximate to a top layer of the oxide material and a second density proximate to a bottom layer of the oxide material and wherein the first density is greater than the second density.
Public/Granted literature
- US20180219009A1 SYSTEMS, METHODS, AND APPARATUS FOR IMPROVED FINFETS Public/Granted day:2018-08-02
Information query
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