- Patent Title: Thin film transistor and array substrate thereof each having doped oxidized or doped graphene active region and oxidized graphene gate insulating layer and producing method thereof
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Application No.: US15507878Application Date: 2016-03-24
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Publication No.: US10141409B2Publication Date: 2018-11-27
- Inventor: Dacheng Zhang , Dianjie Hou , Wenchu Dong
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Dilworth & Barrese, LLP.
- Agent Michael J. Musella, Esq.
- Priority: CN201510604545 20150921
- International Application: PCT/CN2016/077190 WO 20160324
- International Announcement: WO2017/049887 WO 20170330
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/66 ; H01L21/28 ; H01L21/34 ; H01L21/44 ; H01L29/49 ; H01L29/51 ; H01L29/786 ; H01L27/12 ; H01L29/45 ; H01L21/04 ; H01L29/778
Abstract:
A thin film transistor and a producing method thereof, and an array substrate, which belong to a technical field of the thin film transistor, can solve a problem of poor performance of a conventional thin film transistor. The producing method of the thin film transistor comprises: S1: forming a gate electrode (11) composed of graphene; S2: forming a gate insulating layer (12) composed of oxidized graphene; S3: forming an active region (13) composed of doped oxidized graphene or doped graphene; S4: forming a source electrode (14) and a drain electrode (15) composed of graphene, wherein, the graphene composing the source electrode (14), the drain electrode (15) and the gate electrode (11) is formed by reducing oxidized graphene, and the doped oxidized graphene or doped graphene composing the active region (13) is formed by treating oxidized graphene.
Public/Granted literature
- US20170294516A1 THIN FILM TRANSISTOR AND PRODUCING METHOD THEREOF, AND ARRAY SUBSTRATE Public/Granted day:2017-10-12
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