Invention Grant
- Patent Title: Temperature sensing semiconductor device
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Application No.: US15435833Application Date: 2017-02-17
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Publication No.: US10141411B2Publication Date: 2018-11-27
- Inventor: Atsushi Onogi , Toru Onishi , Shuhei Mitani , Yusuke Yamashita , Katsuhiro Kutsuki
- Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA , DENSO CORPORATION
- Applicant Address: JP Toyota JP Kariya
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- Current Assignee Address: JP Toyota JP Kariya
- Agency: Oliff PLC
- Priority: JP2016-056180 20160318
- Main IPC: H01L29/16
- IPC: H01L29/16 ; G01K7/01 ; G01K7/02 ; H01L27/07 ; H01L29/78 ; H01L27/24 ; H01L29/66 ; H01L27/02 ; H01L29/10 ; H01L29/08 ; H01L23/34 ; H01L29/739 ; H01L29/861
Abstract:
A semiconductor device includes a semiconductor substrate of silicon carbide, and a temperature sensor portion. The semiconductor substrate includes a portion in which an n-type drift region and a p-type body region are laminated. The temperature sensor portion is disposed in the semiconductor substrate and is separated from the drift region by the body region. The temperature sensor portion includes an n-type cathode region being in contact with the body region, and a p-type anode region separated from the body region by the cathode region.
Public/Granted literature
- US20170271457A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-09-21
Information query
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