- 专利标题： Resistive random access memory structure and manufacturing method thereof
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申请号： US15594498申请日： 2017-05-12
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公开(公告)号： US10153432B2公开(公告)日： 2018-12-11
- 发明人: Mengkai Zhu
- 申请人： United Microelectronics Corp.
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsinchu
- 代理机构： J.C. Patents
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; H01L45/00 ; G11C13/00
摘要：
A resistive random access memory (RRAM) structure including a substrate, RRAM cells and protection layers is provided. The RRAM cells are adjacent to each other and disposed on the substrate. The protection layers are disposed respectively on sidewalls of the RRAM cells without covering top surfaces of the RRAM cells. Each of the protection layers includes a sidewall portion and an extension portion. The sidewall portion is disposed on each of the sidewalls of each of the RRAM cells. The extension portion is connected to a lower portion of the sidewall portion. An upper portion of the extension portion is lower than an upper portion of the sidewall portion. The extension portion is connected between the sidewall portions in a region between the RRAM cells.
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