Invention Grant
- Patent Title: Metal etchant compositions and methods of fabricating a semiconductor device using the same
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Application No.: US15075709Application Date: 2016-03-21
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Publication No.: US10155903B2Publication Date: 2018-12-18
- Inventor: Hyosan Lee , Yongsun Ko , Kyoungseob Kim , Kuntack Lee , Jihoon Jeong , Chen Lin , Christopher K. Ober
- Applicant: Hyosan Lee , Yongsun Ko , Kyoungseob Kim , Kuntack Lee , Jihoon Jeong , Chen Lin , Christopher K. Ober
- Applicant Address: KR US NY Ithaca
- Assignee: Samsung Electronics Co., Ltd.,Cornell University
- Current Assignee: Samsung Electronics Co., Ltd.,Cornell University
- Current Assignee Address: KR US NY Ithaca
- Agency: Myers Bigel, P.A.
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C23F1/00 ; C03C15/00 ; C03C25/68 ; C25F3/00 ; C09K13/08 ; H01L21/027 ; H01L21/311 ; H01L21/768 ; H01L23/00 ; C23F1/26 ; H01L21/02 ; H01L21/3213 ; H01L21/67 ; C23F1/18 ; C23F1/20
Abstract:
The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.
Public/Granted literature
- US20160204001A1 METAL ETCHANT COMPOSITIONS AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2016-07-14
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