发明授权
- 专利标题： Via formation using sidewall image transfer process to define lateral dimension
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申请号： US15239178申请日： 2016-08-17
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公开(公告)号： US10157789B2公开(公告)日： 2018-12-18
- 发明人: Shyng-Tsong Chen , Cheng Chi , Chi-Chun Liu , Sylvie M. Mignot , Yann A. Mignot , Hosadurga K. Shobha , Terry A. Spooner , Wenhui Wang , Yongan Xu
- 申请人： International Business Machines Corporation , GLOBALFOUNDRIES, INC. , STMicroelectronics, Inc.
- 申请人地址： US NY Armonk US KS Grand Cayman Islands US TX Coppell
- 专利权人： International Business Machines Corporation,GLOBALFOUNDRIES, INC.,STMicroelectronics, Inc.
- 当前专利权人： International Business Machines Corporation,GLOBALFOUNDRIES, INC.,STMicroelectronics, Inc.
- 当前专利权人地址： US NY Armonk US KS Grand Cayman Islands US TX Coppell
- 代理机构： Hoffman Warnick LLC
- 代理商 Steven J. Meyers
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/485 ; H01L23/522 ; H01L23/528 ; H01L23/532
摘要：
A method of forming a via to an underlying layer of a semiconductor device is provided. The method may include forming a pillar over the underlying layer using a sidewall image transfer process. A dielectric layer is formed over the pillar and the underlying layer; and a via mask patterned over the dielectric layer, the via mask having a mask opening at least partially overlapping the pillar. A via opening is etched in the dielectric layer using the via mask, the mask opening defining a first lateral dimension of the via opening in a first direction and the pillar defining a second lateral dimension of the via opening in a second direction different than the first direction. The via opening is filled with a conductor to form the via. A semiconductor device and via structure are also provided.
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