Invention Grant
- Patent Title: Through silicon via based photovoltaic cell
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Application No.: US15127207Application Date: 2014-06-27
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Publication No.: US10158034B2Publication Date: 2018-12-18
- Inventor: Kinyip Phoa , Nidhi Nidhi , Chia-Hong Jan , Walid M. Hafez , Yi Wei Chen
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- International Application: PCT/US2014/044550 WO 20140627
- International Announcement: WO2015/199717 WO 20151230
- Main IPC: H01L31/044
- IPC: H01L31/044 ; H01L31/0224 ; H01L31/056 ; H01L31/047 ; H02S40/38 ; H01L31/028 ; H01L31/05 ; H01L31/068 ; H01L31/18

Abstract:
An embodiment includes an apparatus comprising: a first photovoltaic cell; a first through silicon via (TSV) included in the first photovoltaic cell and passing through at least a portion of a doped silicon substrate, the first TSV comprising (a)(i) a first sidewall, which is doped oppositely to the doped silicon substrate, and (a)(ii) a first contact substantially filling the first TSV; and a second TSV included in the first photovoltaic cell and passing through at least another portion of the doped silicon substrate, the second TSV comprising (b)(i) a second sidewall, which comprises the doped silicon substrate, and (b)(ii) a second contact substantially filling the second TSV; wherein the first and second contacts each include a conductive material that is substantially transparent. Other embodiments are described herein.
Public/Granted literature
- US20170155004A1 THROUGH SILICON VIA BASED PHOTOVOLTAIC CELL Public/Granted day:2017-06-01
Information query
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