Invention Grant
- Patent Title: Manufacturing method for electronic element
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Application No.: US15675783Application Date: 2017-08-13
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Publication No.: US10163769B2Publication Date: 2018-12-25
- Inventor: Kuo-Wei Tseng , Po-Chi Chen
- Applicant: Sitronix Technology Corp.
- Applicant Address: TW Hsinchu County
- Assignee: Sitronix Technology Corp.
- Current Assignee: Sitronix Technology Corp.
- Current Assignee Address: TW Hsinchu County
- Agent Winston Hsu
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/498 ; H01L23/00
Abstract:
The present invention provides a manufacturing method for an electronic element of an electronic apparatus. The electronic element includes a substrate, a bump and at least one under bump metal (UBM) layer. The manufacturing method includes sequentially disposing the UBM layer and the bump onto the substrate; and processing an etching operation at the UBM layer to form a breach structure.
Public/Granted literature
- US20170345784A1 Manufacturing Method for Electronic Element Public/Granted day:2017-11-30
Information query
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