发明授权
- 专利标题： Semiconductor device with post passivation structure and fabrication method therefor
-
申请号： US15642837申请日： 2017-07-06
-
公开(公告)号： US10163831B2公开(公告)日： 2018-12-25
- 发明人: Gulbagh Singh , Chih-Ming Lee , Chi-Yen Lin , Wen-Chang Kuo , C. C. Liu
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/00 ; H01L23/00 ; H01L23/522 ; H01L23/58 ; H01L23/528 ; H01L21/78 ; H01L23/544 ; G06F17/50 ; H01L29/06 ; H01L23/31 ; H01L23/532 ; H01L21/66
摘要：
A method of fabricating a semiconductor device includes forming a first contact pad and a second contact pad over a first passivation layer, depositing a first buffer layer over the first contact pad and the second contact pad, and depositing a second buffer layer over the first buffer layer and the second contact pad. The first contact pad is in a circuit region and the second contact pad is in a non-circuit region. An edge of the second contact pad is exposed and a periphery of the first contact pad and an edge of the second contact pad are covered by the first buffer layer.
公开/授权文献
信息查询
IPC分类:
