- 专利标题： Semiconductor device and method of manufacturing same
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申请号： US15428350申请日： 2017-02-09
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公开(公告)号： US10164087B2公开(公告)日： 2018-12-25
- 发明人: Senichirou Nagase , Tsuyoshi Kachi , Yoshinori Hoshino
- 申请人： RENESAS ELECTRONICS CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2016-023767 20160210
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/40 ; H01L29/66 ; H01L21/265
摘要：
To provide a semiconductor device equipped with a snubber portion having an improved withstand voltage and capable of reducing a surge voltage at turn-off of an insulated gate field effect transistor portion. The concentration of a first conductivity type impurity in a snubber semiconductor region is greater than that in a drift layer. The thickness of a snubber insulating film between the snubber semiconductor region and a snubber electrode is greater than that of a gate insulating film between a gate electrode and a body region.
公开/授权文献
- US20170229572A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 公开/授权日：2017-08-10
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