- Patent Title: Gadolinium sputtering target and production method of said target
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Application No.: US13517208Application Date: 2010-12-21
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Publication No.: US10167547B2Publication Date: 2019-01-01
- Inventor: Shiro Tsukamoto
- Applicant: Shiro Tsukamoto
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2009-292496 20091224
- International Application: PCT/JP2010/072965 WO 20101221
- International Announcement: WO2011/078148 WO 20110630
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/14 ; H01J37/34 ; H01J37/32 ; B23K20/02

Abstract:
An assembly of a gadolinium target and a titanium backing plate, wherein the gadolinium target-titanium backing plate assembly has a solid-phase diffusion-bonded interface at a bonding interface between the gadolinium target and the titanium backing plate. An object of the present invention is to discover a backing plate that is suitable for the gadolinium sputtering target, explore the optimal bonding conditions, improve the deposition rate, stabilize the sputtering process, and prevent the occurrence of warpage and separation of the target material and the backing plate by increasing the bonding strength between the target material and the backing plate, as well as inhibit the generation of particles during sputtering.
Public/Granted literature
- US20120255859A1 GADOLINIUM SPUTTERING TARGET AND PRODUCTION METHOD OF SAID TARGET Public/Granted day:2012-10-11
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