- 专利标题: Methods of forming patterns using nanoimprint lithography
-
申请号: US15588925申请日: 2017-05-08
-
公开(公告)号: US10175572B2公开(公告)日: 2019-01-08
- 发明人: Woo Yung Jung
- 申请人: SK hynix Inc.
- 申请人地址: KR Gyeonggi-do
- 专利权人: SK Hynix Inc.
- 当前专利权人: SK Hynix Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: IP & T Group LLP
- 优先权: KR10-2016-0109950 20160829
- 主分类号: G03B27/42
- IPC分类号: G03B27/42 ; G03B27/52 ; G03F7/00
摘要:
A method of forming patterns is provided. The method includes forming a resist layer on a substrate, forming a lattice-shaped extrusion barrier region in the resist layer to define pattern transfer regions corresponding to a plurality of separate windows, and positioning a template on the resist layer so that a patterned surface of the template faces the resist layer. The patterned surface provides a plurality of transfer patterns. The template is pressed to perform an imprint step for embedding the transfer patterns of the template into the pattern transfer regions of the resist layer.
公开/授权文献
信息查询