Invention Grant
- Patent Title: Semiconductor device, inverter circuit, drive device, vehicle, and elevator
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Application No.: US15891935Application Date: 2018-02-08
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Publication No.: US10177251B2Publication Date: 2019-01-08
- Inventor: Tatsuo Shimizu , Takashi Shinohe , Ryosuke Iijima
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-100824 20170522
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L29/06 ; H01L29/10 ; H01L29/16 ; H01L29/417 ; H01L29/08 ; H01L29/36 ; H01L29/49
Abstract:
A semiconductor device according to an embodiment includes a silicon carbide layer having a first plane and a second plane; a source electrode; a drain electrode; first and second gate electrodes located; an n-type drift region and a p-type body region; n-type first and second source regions; a p-type first silicon carbide region and p-type second silicon carbide region having a p-type impurity concentration higher than the body region; first and second gate insulating layers; a p-type third silicon carbide region contacting the first silicon carbide region, a first n-type portion being located between the first gate insulating layer and the third silicon carbide region; and a p-type fourth silicon carbide region contacting the second silicon carbide region, a second n-type portion being located between the second gate insulating layer and the fourth silicon carbide region.
Public/Granted literature
- US20180337275A1 SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR Public/Granted day:2018-11-22
Information query
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