- 专利标题： Low loss electronic devices having increased doping for reduced resistance and methods of forming the same
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申请号： US13835342申请日： 2013-03-15
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公开(公告)号： US10181532B2公开(公告)日： 2019-01-15
- 发明人: Mrinal Kanti Das , Doyle Craig Capell
- 申请人： Cree, Inc.
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Myers Bigel, P.A.
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L29/16 ; H01L29/86 ; H01L29/861
摘要：
An electronic device includes a drift region having a first conductivity type and a grid including a plurality of doped regions formed in the drift region and having a second conductivity type. The doped regions have a dopant concentration greater than 2.2×1019 cm−3. Related methods are also disclosed.
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