First no-electrode-forming areas where first wiring electrodes such as internal wiring electrodes and external connection terminals are not formed are set to ranges that overlap inductor components in a plan view of at least one of dielectric layers of a first substrate, and second no-electrode-forming areas where second wiring electrodes such as internal wiring electrodes and mounting electrodes are not formed are set to ranges that overlaps the inductor components in a plan view of at least one of dielectric layers of a second substrate. Accordingly, reduction of the inductance of the inductor components, which is caused by the first and second wiring electrodes crossing the magnetic field of the inductor components, can be suppressed. Therefore, the overall component size can be reduced without deteriorating the Q value of the inductor components by configuring an RF component with a stacking structure.