- 专利标题： Thin film transistor, manufacturing method thereof, and method for manufacturing array substrate
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申请号： US15843796申请日： 2017-12-15
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公开(公告)号： US10199236B2公开(公告)日： 2019-02-05
- 发明人: Dezhi Xu , Xianxue Duan , Kui Gong
- 申请人： BOE TECHNOLOGY GROUP CO., LTD. , HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 申请人地址： CN CN
- 专利权人： BOE TECHNOLOGY GROUP CO., LTD.,HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人： BOE TECHNOLOGY GROUP CO., LTD.,HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人地址： CN CN
- 代理机构： Brooks Kushman P.C.
- 优先权： CN201710300075 20170428
- 主分类号： H01L21/467
- IPC分类号： H01L21/467 ; H01L29/66 ; H01L21/308 ; H01L29/786 ; H01L27/32 ; H01L27/12
摘要：
A thin film transistor, a manufacturing method thereof, and a method for manufacturing an array substrate are provided. The method for manufacturing the thin film transistor includes: forming an active layer film on a base; and forming a source electrode and a drain electrode of the thin film transistor using a conductive photoresist.
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