Invention Grant
- Patent Title: Semiconductor device and a method of manufacturing the same
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Application No.: US15153537Application Date: 2016-05-12
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Publication No.: US10199338B2Publication Date: 2019-02-05
- Inventor: Taku Kanaoka , Masashi Sahara , Yoshio Fukayama , Yutaro Ebata , Kazuhisa Higuchi , Koji Fujishima
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2002-250537 20020829
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L23/00 ; H01L23/31 ; H01L23/522 ; H01L23/528 ; H01L23/48 ; H01L21/762 ; H01L27/02 ; H01L23/12 ; H01L23/495 ; H01L23/498

Abstract:
A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.
Public/Granted literature
- US20160284652A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-09-29
Information query
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