Invention Grant
- Patent Title: Method of fabricating substrate structure
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Application No.: US15867008Application Date: 2018-01-10
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Publication No.: US10199345B2Publication Date: 2019-02-05
- Inventor: Hsin-Ta Lin , Ching-Wen Chiang
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW104117740A 20150602
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L23/00 ; H01L23/498 ; H01L21/48 ; H01L23/31

Abstract:
A substrate structure is provided, which includes: a substrate body having a plurality of conductive pads; an insulating layer formed on the substrate body and exposing the conductive pads; a plurality of conductive vias formed in the insulating layer and electrically connected to the conductive pads; a plurality of circuits formed on the conductive vias and in the insulating layer, wherein the circuits are greater in width than the conductive vias; and a plurality of conductive posts formed on the circuits and the insulating layer, wherein each of the conductive posts has a width greater than or equal to that of each of the circuits. The conductive vias, the circuits and the conductive posts are integrally formed. As such, micro-chips or fine-pitch conductive pads can be electrically connected to the substrate structure in a flip-chip manner.
Public/Granted literature
- US20180138140A1 METHOD OF FABRICATING SUBSTRATE STRUCTURE Public/Granted day:2018-05-17
Information query
IPC分类: