Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15688646Application Date: 2017-08-28
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Publication No.: US10199391B2Publication Date: 2019-02-05
- Inventor: Taishi Ishikura , Atsunobu Isobayashi , Masayuki Kitamura , Akihiro Kajita
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2017-046189 20170310
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11568 ; H01L27/11551 ; H01L29/792 ; H01L27/11556 ; H01L27/11575 ; H01L27/11565 ; H01L29/66 ; H01L27/11573 ; H01L27/11553 ; H01L27/11578
Abstract:
A semiconductor device includes an under layer, a stacked body comprising a plurality of conductive layers and insulating layers alternately stacked one over the other in a stacking direction, above the insulating layer, a columnar portion extending into the stacked body in the stacking direction of the stacked body, and a graphene film between at least one of the conductive layers and adjacent insulating layers and between the at least one of the conductive layers and the columnar portion.
Public/Granted literature
- US20180261624A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-09-13
Information query
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