The present disclosure provides a metal oxide thin film transistor, wherein an oxygen deficiency adsorptive removal layer comprising an oxygen deficiency adsorptive removal material is provided between an active layer and a source, and/or between the active layer and a drain. The standard Gibbs free energy of formation of an oxide of the oxygen deficiency adsorptive removal material in a unit volume is larger than that of a metal oxide in the active layer. The present disclosure further provides a display substrate comprising the metal oxide thin film transistor and a display device comprising the display substrate.