- Patent Title: Lower electrode of DRAM capacitor and manufacturing method thereof
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Application No.: US15386741Application Date: 2016-12-21
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Publication No.: US10199451B2Publication Date: 2019-02-05
- Inventor: Tadahiro Ishizaka , Masaki Koizumi , Masaki Sano , Seokhyoung Hong
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2015-248362 20151221
- Main IPC: H01L49/02
- IPC: H01L49/02
Abstract:
A lower electrode is made of a TiN-based material and provided at a base of a dielectric film in a DRAM capacitor. The lower electrode includes first TiON films provided at opposite outer sides, the first TiON films having a relatively low oxygen concentration, and a second TiON film provided between the first TiON films, the second TiON film having a relatively high oxygen concentration.
Public/Granted literature
- US20170179219A1 LOWER ELECTRODE OF DRAM CAPACITOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-06-22
Information query
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