Invention Grant
- Patent Title: Methods and apparatuses for compensating for source voltage
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Application No.: US15454975Application Date: 2017-03-09
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Publication No.: US10204663B2Publication Date: 2019-02-12
- Inventor: Jaekwan Park
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C7/06 ; G11C7/08 ; G11C7/12 ; G11C16/24 ; G11C16/26 ; G11C7/14 ; G11C7/22

Abstract:
Apparatuses and methods for compensating for source voltage are described. An example apparatus includes a source cooled to a memory cell and a read-write circuit coupled to the memory cell. The apparatus further includes a sense current generator coupled to a node or the source and to the read-write circuit, the sense current generator configured to control provision of a sense current by the read-write circuit responsive to a voltage of the node of the source.
Public/Granted literature
- US20170178696A1 METHODS AND APPARATUSES FOR COMPENSATING FOR SOURCE VOLTAGE Public/Granted day:2017-06-22
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