Invention Grant
- Patent Title: Structure with local contact for shorting a gate electrode to a source/drain region
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Application No.: US15399200Application Date: 2017-01-05
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Publication No.: US10204861B2Publication Date: 2019-02-12
- Inventor: Xuelian Zhu , Jia Zeng , Wenhui Wang , Youngtag Woo , Jongwook Kye
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon P.C.
- Agent Francois Pagette; Andrew M. Calderon
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L23/535 ; H01L29/417 ; H01L21/768

Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to contacts for local connections and methods of manufacture. The structure includes: at least one contact electrically shorted to a gate structure and a source/drain contact and located below a first wiring layer; and gate, source and drain contacts extending from selected gate structures and electrically connecting to the first wiring layer.
Public/Granted literature
- US20180190588A1 CONTACTS FOR LOCAL CONNECTIONS Public/Granted day:2018-07-05
Information query
IPC分类: