Invention Grant
- Patent Title: Methods of forming a semiconductor device with a gate contact positioned above the active region
-
Application No.: US15477565Application Date: 2017-04-03
-
Publication No.: US10204994B2Publication Date: 2019-02-12
- Inventor: Ruilong Xie , Chanro Park , Andre P. Labonte , Lars W. Liebmann , Nigel G. Cave , Mark V. Raymond , Guillaume Bouche , David E. Brown
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/423 ; H01L29/45 ; H01L21/768 ; H01L27/088 ; H01L29/66 ; H01L21/8234 ; H01L21/3213

Abstract:
One illustrative device disclosed herein includes, among other things, a stepped conductive source/drain structure with a first recess defined therein and a stepped final gate structure with a second recess defined therein, wherein, when viewed from above, the second recess is axially and laterally offset from the first recess. In this example, the device also includes a layer of insulating material positioned above the stepped conductive source/drain structure and the stepped final gate structure, a conductive gate (CB) contact that is conductively coupled to the stepped final gate structure and a conductive source/drain (CA) contact that is conductively coupled to the stepped conductive source/drain structure.
Public/Granted literature
- US20180286956A1 METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A GATE CONTACT POSITIONED ABOVE THE ACTIVE REGION Public/Granted day:2018-10-04
Information query
IPC分类: