- 专利标题： Process-metrology reproducibility bands for lithographic photomasks
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申请号： US15838423申请日： 2017-12-12
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公开(公告)号： US10210292B2公开(公告)日： 2019-02-19
- 发明人: Todd C. Bailey , Ioana C. Graur , Scott D. Halle , Marshal A. Miller
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Stephen R. Yoder
- 主分类号： G06F17/50
- IPC分类号： G06F17/50 ; G03F7/20
摘要：
A photomask lithography simulation model is created for making a semiconductor chip. Poor metrology is filtered and removed from a contour-specific metrology dataset to improve performance of the photomask. Filtering is performed by the application of a weighting scheme.
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