Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US15815032Application Date: 2017-11-16
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Publication No.: US10211070B2Publication Date: 2019-02-19
- Inventor: Chanho Lee , Hyunsoo Chung , Hansung Ryu , InYoung Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2017-0055493 20170428
- Main IPC: H01L21/50
- IPC: H01L21/50 ; H01L23/48 ; H01L23/00 ; H01L23/58 ; H01L23/373 ; H01L21/48 ; H01L21/02
Abstract:
A semiconductor device including a substrate, an insulating, layer on the substrate and including a trench, at least one via structure penetrating the substrate and protruding above a bottom surface of the trench, and a conductive structure surrounding the at least one via structure in the trench may be provided.
Public/Granted literature
- US20180315620A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-11-01
Information query
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