Invention Grant
- Patent Title: Metrology method, metrology apparatus and device manufacturing method
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Application No.: US15013756Application Date: 2016-02-02
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Publication No.: US10222709B2Publication Date: 2019-03-05
- Inventor: Richard Quintanilha
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Priority: EP15153825 20150204
- Main IPC: G01N23/083
- IPC: G01N23/083 ; G03F7/20

Abstract:
A pattern is applied to a substrate by a lithographic apparatus as part of a lithographic manufacturing system. Structures are produced with feature sizes less than 10 nm. A target includes one or more gratings with a direction of periodicity. A detector captures one or more diffraction spectra, to implement small angle X-ray scattering metrology. One or more properties, such as linewidth (CD), are calculated from the captured spectra for example by reconstruction. The irradiation direction defines a non-zero polar angle relative to a direction normal to the substrate and defines a non-zero azimuthal angle relative to the direction of periodicity, when projected onto a plane of the substrate. By selecting a suitable azimuthal angle, the diffraction efficiency of the target can be enhanced by a large factor. This allows measurement time to be reduced significantly compared with known techniques.
Public/Granted literature
- US20160223476A1 METROLOGY METHOD, METROLOGY APPARATUS AND DEVICE MANUFACTURING METHOD Public/Granted day:2016-08-04
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