A method of forming an air gap for a semiconductor device and the device formed are disclosed. The method may include forming an air gap mask layer over a dielectric interconnect layer, the dielectric interconnect layer including a dielectric layer having a conductive interconnect therein and a cap layer over the dielectric layer; patterning the air gap mask layer using extreme ultraviolet (EUV) light and etching to form an air gap mask including an opening in the cap layer exposing a portion of the dielectric layer of the dielectric interconnect layer adjacent to the conductive interconnect; removing the air gap mask; etching an air gap space adjacent to the conductive interconnect within the dielectric layer of the dielectric interconnect layer using the opening in the cap layer; and forming an air gap in the dielectric interconnect layer by depositing an air gap capping layer to seal the air gap space.