- 专利标题: Nonvolatile memory storage system
-
申请号: US15475670申请日: 2017-03-31
-
公开(公告)号: US10229749B2公开(公告)日: 2019-03-12
- 发明人: Eun Chu Oh , Pilsang Yoon , Jun Jin Kong , Hong Rak Son , Dongsup Jin
- 申请人: Eun Chu Oh , Pilsang Yoon , Jun Jin Kong , Hong Rak Son , Dongsup Jin
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 主分类号: G11C29/50
- IPC分类号: G11C29/50 ; G11C16/04 ; G11C16/26 ; G11C16/10
摘要:
A nonvolatile memory storage system includes a plurality of memory cells and a memory controller configured to transmit a read command to a nonvolatile memory device based on a plurality of read voltages. The nonvolatile memory device performs a first read operation on a first level among the N levels based on a first read voltage among the plurality of read voltages, counts the number of on-cells that respond to the first read voltage among the plurality of memory cells, and adjusts a level of a second read voltage to be used to perform a second read operation on the first level or a second level among the N levels among the plurality of read voltages according to a comparison result of the counted number of on-cells and the number of reference cells.
公开/授权文献
- US20180286495A1 NONVOLATILE MEMORY STORAGE SYSTEM 公开/授权日:2018-10-04