Invention Grant
- Patent Title: Semiconductor device with a resistance element and an electrostatic protection element
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Application No.: US15635441Application Date: 2017-06-28
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Publication No.: US10229903B2Publication Date: 2019-03-12
- Inventor: Eisuke Kodama
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2016-179331 20160914
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/06 ; H01L23/535 ; H01L27/07
Abstract:
In a semiconductor device including a resistance element, an electrostatic protection element, including a parasitic bipolar transistor having the resistance element as a component, is provided. That is, instead of providing a dedicated electrostatic protection element in a semiconductor device, a function as an electrostatic protection element is also achieved by using a resistance element provided in a semiconductor device.
Public/Granted literature
- US20180076191A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-03-15
Information query
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