A method for manufacturing a semiconductor device includes forming a plurality of dummy gate patterns spaced apart from each other on a substrate, growing a plurality of source/drain regions adjacent the plurality of dummy gate patterns, forming a dielectric layer on each of the plurality of source/drain regions adjacent the plurality of dummy gate patterns, removing the plurality of dummy gate patterns to create a plurality of trenches, forming a plurality of spacers on sidewalls of each of the plurality of trenches, wherein the plurality of spacers comprise at least one of a low-k material and an airgap, and forming a gate structure in each of the plurality of trenches between the plurality of spacers.