Invention Grant
- Patent Title: Staggered power structure in a power distribution network (PDN)
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Application No.: US14264836Application Date: 2014-04-29
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Publication No.: US10231324B2Publication Date: 2019-03-12
- Inventor: Ryan David Lane , Yue Li , Charles David Paynter , Ruey Kae Zang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP/Qualcomm
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H05K1/02 ; H01L21/768 ; H01L23/498 ; H01L23/528 ; H01L23/522 ; H01L23/525

Abstract:
Some novel features pertain to an integrated device that includes a first metal layer and a second metal layer. The first metal layer includes a first set of regions. The first set of regions includes a first netlist structure for a power distribution network (PDN) of the integrated device. The second metal layer includes a second set of regions. The second set of regions includes a second netlist structure of the PDN of the integrated device. In some implementations, the second metal layer further includes a third set of regions comprising the first netlist structure for the PDN of the integrated device. In some implementations, the first metal layer includes a third set of regions that includes a third netlist structure for the PDN of the integrated device. The third set of regions is non-overlapping with the first set of regions of the first metal layer.
Public/Granted literature
- US20150313006A1 STAGGERED POWER STRUCTURE IN A POWER DISTRIBUTION NETWORK (PDN) Public/Granted day:2015-10-29
Information query
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