Word line read disturb error reduction through fine grained access counter mechanism
Abstract:
An apparatus is described. The apparatus includes a storage device having multiple non volatile memory chips and controller circuitry. The controller circuitry is to implement wear leveling of storage cells of the non volatile memory chips at a granularity of segments of storage cell arrays of the non volatile memory chips that share a same disturber node and that are coupled to a same storage cell array wire to diminish disturb errors.
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