- 专利标题： Gallium nitride nanowire based electronics
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申请号： US15594043申请日： 2017-05-12
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公开(公告)号： US10236178B2公开(公告)日： 2019-03-19
- 发明人: Jonas Ohlsson , Mikael Bjork
- 申请人： HEXAGEM AB
- 申请人地址： SE Hjarup
- 专利权人： HEXAGEM AB
- 当前专利权人： HEXAGEM AB
- 当前专利权人地址： SE Hjarup
- 代理机构： The Marbury Law Law Group PLLC
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; B82Y10/00 ; B82Y40/00 ; H01L21/306 ; H01L27/02 ; H01L27/06 ; H01L27/085 ; H01L29/06 ; H01L29/66 ; H01L29/778 ; H01L29/786 ; H01L29/861 ; H01L29/872 ; H01L29/10 ; H01L29/04 ; H01L29/20 ; H01L29/40 ; H01L29/417 ; H01L29/423 ; H01L29/812
摘要：
GaN based nanowires are used to grow high quality, discreet base elements with c-plane top surface for fabrication of various semiconductor devices, such as diodes and transistors for power electronics.
公开/授权文献
- US20170316932A1 GALLIUM NITRIDE NANOWIRE BASED ELECTRONICS 公开/授权日：2017-11-02
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