- 专利标题： Semiconductor device for preventing field inversion
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申请号： US15871790申请日： 2018-01-15
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公开(公告)号： US10236284B2公开(公告)日： 2019-03-19
- 发明人: Shusaku Fujie
- 申请人： ROHM CO., LTD.
- 申请人地址： JP Kyoto
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2013-134001 20130626
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/66 ; H01L27/02 ; H01L29/78 ; H01L23/482 ; H01L21/761 ; H01L27/088 ; H01L29/423 ; H01L29/08
摘要：
A semiconductor device includes a semiconductor layer having an element formation region in which a semiconductor element is formed. An element isolation well is formed in a surface portion of the semiconductor layer to isolate the element formation region. A field insulating film is formed on a surface of the semiconductor layer. The field insulating film surrounds the element formation region in an annular shape when viewed from a top. An interlayer insulating film is formed on the semiconductor layer. A wiring is formed on the interlayer insulating film. A conductive film is formed on the field insulating film.
公开/授权文献
- US20180138165A1 SEMICONDUCTOR DEVICE FOR PREVENTING FIELD INVERSION 公开/授权日：2018-05-17
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