A method of fabricating a semiconductor device includes forming a material layer and a mask pattern on a substrate, mounting the substrate onto an electrostatic chuck, loading the substrate, including the material layer and the mask pattern, mounted on the electrostatic chuck, into an etching chamber, and forming a material pattern by dry etching the material layer using the mask pattern as an etching mask. The dry etching of the material layer includes adjusting a pressure of the etching chamber to adjust a lateral over-etch of the material pattern in a first direction, wherein the first direction is parallel to a surface of the substrate facing the material pattern, and adjusting a temperature of the electrostatic chuck to adjust an etching of the material pattern in a second direction, wherein the second direction crosses the first direction.