- 专利标题: Semiconductor device
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申请号: US15934505申请日: 2018-03-23
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公开(公告)号: US10236868B2公开(公告)日: 2019-03-19
- 发明人: Koji Takayanagi
- 申请人: Renesas Electronics Corporation
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: McGinn IP Law Group, PLLC.
- 优先权: JP2016-057403 20160322
- 主分类号: H03K3/356
- IPC分类号: H03K3/356 ; H03K17/10 ; H03K19/003
摘要:
A semiconductor device includes: a semiconductor chip including a level shift circuit to output a high amplitude signal from an input of a logical signal, the level shift circuit including a series coupling circuit coupled to a second power supply, a control circuit coupled to the series coupling circuit for controlling the series coupling circuit based on the logical signal, and a first potential conversion circuit coupled between the series coupling circuit and the control circuit and coupled to a first power supply. The series coupling circuit includes a plurality of first MOS transistors coupled in series between the second power supply and a reference power supply, and a plurality of second MOS transistors coupled in series between the second power supply and the reference power supply in series with the plurality of first MOS transistors.
公开/授权文献
- US20180269860A1 SEMICONDUCTOR DEVICE 公开/授权日:2018-09-20
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