- 专利标题: Thin film transistor, method for manufacturing the same, array substrate and display device
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申请号: US15811835申请日: 2017-11-14
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公开(公告)号: US10241371B2公开(公告)日: 2019-03-26
- 发明人: Hefei Li , Xianxue Duan , Chengcheng Wang
- 申请人: BOE TECHNOLOGY GROUP CO., LTD. , Hefei BOE Optoelectronics Technology Co., Ltd.
- 申请人地址: CN Beijing CN Anhui
- 专利权人: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人地址: CN Beijing CN Anhui
- 代理机构: Calfee, Halter & Griswold LLP
- 优先权: CN201710254487 20170418
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; G02F1/1362 ; G02F1/1368
摘要:
A thin film transistor, a method for manufacturing the same, an array substrate and a display device are provided. The method for manufacturing a thin film transistor includes: providing a substrate; forming an active layer and a light shielding layer covering the active layer on the substrate by a patterning process, the light shielding layer being formed of a photoresist material; and forming a source-drain electrode layer and a passivation layer covering the source-drain electrode layer.
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