Invention Grant
- Patent Title: Power management of a memory device by dynamically changing supply voltage
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Application No.: US15416140Application Date: 2017-01-26
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Publication No.: US10242719B2Publication Date: 2019-03-26
- Inventor: Su Yeon Doo , Taeyoung Oh
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2016-0043581 20160408; KR10-2016-0079521 20160624
- Main IPC: G06F1/00
- IPC: G06F1/00 ; G11C5/14 ; G06F1/26 ; G06F1/3287 ; G06F1/3296

Abstract:
An electronic device includes a memory device including a power switch configured to provide one of a first voltage and a second voltage to an internal circuit in response to a control command. A power management device is configured to generate the first voltage, the second voltage, and the control command and to provide the first voltage, the second voltage, and the control command to the memory device. The power switch provides the second voltage to the internal circuit while a level of the first voltage is changed and provides the first voltage to the internal circuit after a level change of the first voltage is completed.
Public/Granted literature
- US20170294216A1 DYNAMIC POWER MANAGMENT OF A MEMORY DEVICE Public/Granted day:2017-10-12
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