- 专利标题: Devices having an electron emitting structure
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申请号: US14385503申请日: 2013-03-14
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公开(公告)号: US10242836B2公开(公告)日: 2019-03-26
- 发明人: Koichi Iida , Hidenori Kenmotsu , Jun Yamazaki , Hitoshi Masuya
- 申请人: NANOX IMAGING PLC
- 申请人地址: GI Gibraltar
- 专利权人: NANOX IMAGING PLC
- 当前专利权人: NANOX IMAGING PLC
- 当前专利权人地址: GI Gibraltar
- 代理机构: Alphapatent Associates Ltd.
- 代理商 Daniel J. Swirsky
- 国际申请: PCT/IB2013/052045 WO 20130314
- 国际公布: WO2013/136299 WO 20130919
- 主分类号: H01J35/06
- IPC分类号: H01J35/06 ; H01J35/14 ; G01N23/046 ; H01J1/304 ; H01J29/46 ; H01J31/12 ; G01T1/161 ; H01J3/02 ; H01J3/14
摘要:
The disclosure relates to an image capture device comprising an electron receiving construct and an electron emitting construct, and further comprising an inner gap providing an unobstructed space between the electron emitting construct and the electron receiving construct. The disclosure further relates to an x-ray emitting device comprising an x-ray emitting construct and an electron emitting construct, said x-ray emitting construct comprising an anode, the anode being an x-ray target, wherein the x-ray emitting device may comprise an inner gap providing an unobstructed space between the electron emitting construct and the x-ray emitting construct. The disclosure further relates to an x-ray imaging system comprising an image capture device and an x-ray emitting device.
公开/授权文献
- US20150092923A1 DEVICES HAVING AN ELECTRON EMITTING STRUCTURE 公开/授权日:2015-04-02