Invention Grant
- Patent Title: Aluminum compound and methods of forming thin film and fabricating integrated circuit device by using the same
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Application No.: US15423027Application Date: 2017-02-02
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Publication No.: US10242877B2Publication Date: 2019-03-26
- Inventor: Gyu-hee Park , Jae-soon Lim , Youn-joung Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2016-0089206 20160714
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/285 ; H01L49/02 ; H01L27/11582 ; H01L29/66
Abstract:
Provided are an aluminum compound represented by General Formula (I), a method of forming a thin film, and a method of fabricating an integrated circuit device.
Public/Granted literature
Information query
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