- 专利标题： Shared metal gate stack with tunable work function
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申请号： US15908085申请日： 2018-02-28
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公开(公告)号： US10243055B2公开(公告)日： 2019-03-26
- 发明人: Ruqiang Bao , Siddarth A. Krishnan , Unoh Kwon , Vijay Narayanan
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Jennifer Davis
- 主分类号： H01L29/49
- IPC分类号： H01L29/49 ; H01L21/306 ; H01L29/78 ; H01L29/66 ; H01L21/8238 ; H01L21/84 ; H01L27/092 ; H01L27/12
摘要：
Semiconductor devices include at least one semiconductor fin in each of a first region and a second region. A first work function stack that includes a bottom layer, a middle layer, and a top layer is formed over the at least one semiconductor fin in the first region. A second work function stack that includes a first layer and a second layer is formed over the at least one semiconductor fin in the second region. The first layer is continuous with the bottom layer of the first work function stack and the second layer is continuous with the middle layer of the first work function stack but has a smaller thickness than the middle layer. A continuous gate is formed over the first and the second work function stack.
公开/授权文献
- US20180190784A1 SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION 公开/授权日：2018-07-05
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