Invention Grant
- Patent Title: Light-emitting diode with improved light extraction efficiency
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Application No.: US15965757Application Date: 2018-04-27
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Publication No.: US10243109B2Publication Date: 2019-03-26
- Inventor: Jin Woong Lee , Kyoung Wan Kim , Yeo Jin Yoon , Ye Seul Kim
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee Address: KR Ansan-si
- Agency: Perkins Coie LLP
- Priority: KR10-2012-0146772 20121214
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/44 ; H01L33/42 ; H01L33/38 ; H01L33/22 ; H01L33/20

Abstract:
According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.
Public/Granted literature
- US20180248081A1 LIGHT-EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY Public/Granted day:2018-08-30
Information query
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