- 专利标题: Method of manufacturing semiconductor device
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申请号: US15898677申请日: 2018-02-19
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公开(公告)号: US10248023B1公开(公告)日: 2019-04-02
- 发明人: Yasuki Aihara , Kazuyuki Onoe , Takahiro Ueno
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 优先权: JP2017-176765 20170914
- 主分类号: G03F7/16
- IPC分类号: G03F7/16 ; G03F7/00 ; H01L21/306 ; H01L21/027 ; G03F7/40
摘要:
A method of manufacturing a semiconductor device includes: coating a first resist containing a photoacid generator or a thermal acid generator on a semiconductor substrate; forming a first opening portion in the first resist by optical exposure; subjecting a shrink agent containing an acid to a crosslinking reaction by the heat treatment to form a thermoset layer on an overall surface of the first resist; coating a second resist on the semiconductor substrate and the thermoset layer; and forming a second opening portion located above the first opening portion and larger than the first opening portion in the second resist by optical exposure.
公开/授权文献
- US20190079400A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2019-03-14
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