Invention Grant
- Patent Title: Bias circuit
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Application No.: US15839189Application Date: 2017-12-12
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Publication No.: US10248149B2Publication Date: 2019-04-02
- Inventor: Chih-Sheng Chen , Tien-Yun Peng , Jhao-Yi Lin
- Applicant: RICHWAVE TECHNOLOGY CORP.
- Applicant Address: TW Taipei
- Assignee: RichWave Technology Corp.
- Current Assignee: RichWave Technology Corp.
- Current Assignee Address: TW Taipei
- Agent Winston Hsu
- Priority: TW106109956A 20170324
- Main IPC: H03K17/56
- IPC: H03K17/56 ; G05F3/16 ; H03F5/00 ; H03F1/30 ; H01L27/06 ; H03F1/22

Abstract:
A bias circuit includes a first transistor, a second transistor, a first resistor and a second resistor. The first end of the first transistor is coupled to a first voltage source. One end of the first resistor is coupled to the second end of the first transistor, and the other end of the first resistor is coupled to the control terminal of the first transistor. The first end of the second transistor is coupled to a second voltage source, and the second end of the second transistor is coupled to the control terminal of the first transistor. One end of the second resistor is coupled to the other end of the first resistor, and the other end of the second resistor is coupled to the control terminal of the second transistor.
Public/Granted literature
- US20180275709A1 BIAS CIRCUIT Public/Granted day:2018-09-27
Information query
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