- 专利标题： Semiconductor apparatus, memory module and operation method thereof
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申请号： US15642795申请日： 2017-07-06
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公开(公告)号： US10248340B2公开(公告)日： 2019-04-02
- 发明人: Nam Young Ahn , Kyung Hoon Kim , Hyun Jung Park
- 申请人： SK hynix Inc.
- 申请人地址： KR Icheon-si, Gyeonggi-do
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Icheon-si, Gyeonggi-do
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2017-0008507 20170118
- 主分类号： G06F3/06
- IPC分类号： G06F3/06 ; G11C8/06 ; G11C7/10 ; G11C7/14 ; G11C7/24 ; G11C5/04
摘要：
A memory module may be provided. The memory module may include a normal memory device, a spare memory device, and a row hammering determination circuit. The row hammering determination circuit may be configured to control the spare memory device to perform a data input and output operation, instead of a data input and output operation with the normal memory device in which row hammering has occurred.
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